? 2008 ixys corporation, all rights reserved ds99678a(09/08) trenchmv tm power mosfet n-channel enhancement mode avalanche rated IXTN200N10T symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 50a, note 1 5.5 m v dss = 100v i d25 = 200a r ds(on) 5.5 m s g s d minibloc, sot-227 b e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source preliminary technical information symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 200 a i lrms external lead current limit 100 a i dm t c = 25 c, pulse width limited by t jm 500 a i a t c = 25 c40a e as t c = 25 c 1.5 j p d t c = 25 c 550 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g features z international standard package z minibloc, with aluminium nitride isolation z avalanche rated z low r ds(on) and q g z low package inductance z fast intrinsic rectifier advantages ? low gate charge drive requirement ? high power density applications ? dc-dc coverters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac and dc motor drives ? uninterrupted power supplies ? high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTN200N10T symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 60 96 s c iss 9400 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1087 pf c rss 140 pf t d(on) 35 ns t r 31 ns t d(off) 45 ns t f 34 ns q g(on) 152 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 47 nc q gd 47 nc r thjc 0.27 c/ w r thcs 0.05 c /w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 200 a i sm repetitive, pulse width limited by t jm 500 a v sd i f = 50a, v gs = 0v, note 1 1.0 v t rr 76 ns i rm 5.4 a q rm 205 nc note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 50a r g = 3.3 (external) i f = 100a, -di/dt = 100a/ s, v r = 50v v gs = 0v sot-227b outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation, all rights reserved IXTN200N10T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0123456 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts i d - amperes 5v 6v 7v v gs = 10v 9v 8v fig. 4. r ds(on) normalized to i d = 100a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200a i d = 100a fig. 5. r ds(on) normalized to i d = 100a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 110 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTN200N10T fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 200 225 250 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_200n10t(6v)9-30-08-d
? 2008 ixys corporation, all rights reserved IXTN200N10T ixys ref: t_200n10t(6v)9-30-08-d fig. 14. resistive turn-on rise time vs. drain current 22 23 24 25 26 27 28 29 30 31 32 33 34 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 220 2 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 30 35 40 45 50 55 60 65 70 75 80 85 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 28 30 32 34 36 38 40 42 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 45 50 55 60 65 70 75 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 50v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 30 31 32 33 34 35 36 37 38 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t f - nanoseconds 40 45 50 55 60 65 70 75 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 22 23 24 25 26 27 28 29 30 31 32 33 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 ? v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 2468101214161820 r g - ohms t f - nanoseconds 50 75 100 125 150 175 200 225 250 275 300 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a
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